USED 2015 ULVAC NE950EX
Overview
ULVAC NE-950EX ICP / RIE Etch System. (High-Throughput Dry Etcher for Compound Semiconductors / LED / MEMS).
Manufacturer: ULVAC. Model: NE-950EX
System Type: Inductively Coupled Plasma (ICP) / Reactive Ion Etching (RIE) with magnetic confinement (ISM) — delivers high-density plasma with excellent uniformity and anisotropy. Throughput / Wafer Handling: Batch-type system supporting up to
29 wafers (2″), 12 wafers (3″), 7 wafers (4″), or 3 wafers (6″) per load.
Supported Materials / Applications: Designed for compound-semiconductor and LED manufacturing. Compatible with etching of GaN/AlGaN, sapphire, metals, ITO, SiC, AlN, ZnO, and other III-V or hard materials. Also suitable for MEMS, optical devices, and other thin-film / etch applications.
High-density ICP with magnetic confinement (ISM) and proprietary “Star” electrode for uniform plasma distribution and reduced re-deposition.
Backside helium cooling and temperature-controlled cathode for wafer thermal management; automated cassette-to-carrier wafer load.
Flexible gas chemistry supporting process gases such as BCl₃, Cl₂, SiCl₄, CF₄, SF₆, C₄F₈, O₂, Ar, enabling both F- and Cl-based etches for metals, semiconductors, dielectrics, etc.
Use Cases: Ideal for high-volume LED manufacturing, compound-semiconductor device fabrication, MEMS, optical device structuring, sapphire or hard-material etching where high plasma density, uniformity, and throughput matter.
Contact us with any questions, or to schedule an inspection or to make shipping arrangements. More images available upon request.
Specs
ULVAC NE-950EX ICP / RIE Etch System. (High-Throughput Dry Etcher for Compound Semiconductors / LED / MEMS).
Manufacturer: ULVAC. Model: NE-950EX
System Type: Inductively Coupled Plasma (ICP) / Reactive Ion Etching (RIE) with magnetic confinement (ISM) — delivers high-density plasma with excellent uniformity and anisotropy. Throughput / Wafer Handling: Batch-type system supporting up to
29 wafers (2″), 12 wafers (3″), 7 wafers (4″), or 3 wafers (6″) per load.
Supported Materials / Applications: Designed for compound-semiconductor and LED manufacturing. Compatible with etching of GaN/AlGaN, sapphire, metals, ITO, SiC, AlN, ZnO, and other III-V or hard materials. Also suitable for MEMS, optical devices, and other thin-film / etch applications.
High-density ICP with magnetic confinement (ISM) and proprietary “Star” electrode for uniform plasma distribution and reduced re-deposition.
Backside helium cooling and temperature-controlled cathode for wafer thermal management; automated cassette-to-carrier wafer load.
Flexible gas chemistry supporting process gases such as BCl₃, Cl₂, SiCl₄, CF₄, SF₆, C₄F₈, O₂, Ar, enabling both F- and Cl-based etches for metals, semiconductors, dielectrics, etc.
Use Cases: Ideal for high-volume LED manufacturing, compound-semiconductor device fabrication, MEMS, optical device structuring, sapphire or hard-material etching where high plasma density, uniformity, and throughput matter.
Contact us with any questions, or to schedule an inspection or to make shipping arrangements. More images available upon request.
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