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USED 2015 ULVAC SIV-200

USD $300,000.00
1 available

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Overview
Manufacturer:
ULVAC
Model:
SIV-200
Year:
2015
Stock #:
X-DD-CA-1700-02
Description

The ULVAC SIV-200 is an inline vertical sputtering platform designed for R&D and lot production films such as ITO. It uses a carrier-based inter-back transfer architecture with a load-lock, main sputtering chamber, and automated carrier stocker (qty 6 capacity). The platform supports uniform thin-film deposition for optoelectronic, semiconductor, and display applications.

Specifications
Dimensions180180
Weight1050010500

1. System Overview

The ULVAC SIV-200 is an inline vertical sputtering platform designed for R&D and small-lot production of oxide films such as ITO. It uses a carrier-based inter-back transfer architecture with a load-lock, main sputtering chamber, and automated carrier stocker. The platform supports uniform thin-film deposition for optoelectronic, semiconductor, and display applications.

2. Configuration & Modules

Carrier Stocker: Multi-slot rack-and-pinion transfer system for continuous carrier flow.

Load-Lock Chamber: Automated substrate transfer with vacuum isolation for high throughput.

Main Sputtering Chamber: Side-mounted DC magnetron sputtering cathode designed for oxide deposition.

Control System: Front-mounted touch-panel HMI with recipe management, interlocks, and alarm diagnostics.

3. Substrate Capacity & Fixturing

Standard Substrate Size: 6" (150 mm) wafers.

Carrier Configuration: 3 × 6" wafers per carrier.

Stocker Capacity: 6 carriers (up to 18 wafers in process).

Alternative Configurations: Some SIV-200 builds support 200 × 300 mm plates; final capacity depends on customer-specific fixturing.

Target–Substrate Distance: Fixed 90 mm.

4. Vacuum & Pumping Performance

Ultimate Pressure (Load-Lock): ≤ 1.3 × 10⁻⁴ Pa after continuous pumping.

Ultimate Pressure (Main Chamber): ≤ 1.3 × 10⁻⁴ Pa.

Load-Lock Pump-Down: Atmosphere to 6.7 × 10⁻³ Pa within 10 minutes.

Leak Rate / Pressure Rise: ≤ 6.7 × 10⁻⁶ Pa·m³/s.

These vacuum levels support stable oxide sputtering conditions and minimize contamination between runs.

5. Sputtering Cathode & Process Performance

Cathode Type: ULVAC DC magnetron, side-mounted for vertical transport geometry.

Materials Supported: ITO and a range of oxide/metal targets depending on installed power supply.

Film Uniformity: Designed for uniform coating across vertically oriented substrates; exact performance depends on target type and recipe.

Cooling & Shielding: Water-cooled cathode assembly with removable shields for ease of maintenance.

6. Operational Features

Automation: Fully automated carrier transfer from stocker → load-lock → sputter chamber → unload.

Process Control: Setpoints for power, pressure, gas flow, and deposition time stored in recipes.

Safety Interlocks: Door/vacuum interlocks, power protection, cooling-flow monitoring.

Maintenance Access: Swing-door access to cathode and chamber internals; shield replacement designed for quick turnaround.

7. Utilities (Typical Ranges)

Exact values vary by configuration, but SIV-200 class systems generally require:

Power: Three-phase AC for pumps and control system; dedicated DC power supply for sputter cathode.

Cooling Water: Closed-loop chiller for cathode, pumps, and substrate transport.

Process Gases: Argon (mandatory), oxygen (typical for ITO), with MFC-controlled delivery.

Exhaust: Dry pump or turbo + backing pump configuration depending on installation.

8. Use Cases

The SIV-200 is widely used for:

ITO deposition for optoelectronic devices

Glass/wafer oxide coatings

Specialty research coatings in display, LED, and MEMS markets

Pilot-line or low-volume production environments requiring high cleanliness and repeatability

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